Technical parameters/polarity: NPN
Technical parameters/breakdown voltage (collector emitter): 300 V
Technical parameters/maximum allowable collector current: 2A
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-66
External dimensions/packaging: TO-66
Other/Product Lifecycle: Active
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
JANTX2N5661
|
Microsemi | 完全替代 | TO-66 |
NPN功率硅晶体管 NPN POWER SILICON TRANSISTOR
|
||
JANTXV2N5661
|
Microsemi | 完全替代 | TO-66 |
NPN功率硅晶体管 NPN POWER SILICON TRANSISTOR
|
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