Technical parameters/dissipated power: 350 mW
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 350 mW
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-92
External dimensions/height: 5.33 mm
External dimensions/packaging: TO-92
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N5461
|
TI | 功能相似 |
P沟道通用放大器 P-Channel General Purpose Amplifier
|
|||
2N5461
|
National Semiconductor | 功能相似 |
P沟道通用放大器 P-Channel General Purpose Amplifier
|
|||
2N5461
|
Motorola | 功能相似 | TO-92 |
P沟道通用放大器 P-Channel General Purpose Amplifier
|
||
2N5461
|
Intersil | 功能相似 |
P沟道通用放大器 P-Channel General Purpose Amplifier
|
|||
2N5461
|
Rochester | 功能相似 | TO-92 |
P沟道通用放大器 P-Channel General Purpose Amplifier
|
||
2N5461
|
Vishay Siliconix | 功能相似 | TO-226 |
P沟道通用放大器 P-Channel General Purpose Amplifier
|
||
2N5461
|
Visay | 功能相似 |
P沟道通用放大器 P-Channel General Purpose Amplifier
|
|||
2N5461
|
Vishay Semiconductor | 功能相似 | TO-92 |
P沟道通用放大器 P-Channel General Purpose Amplifier
|
||
2N5461
|
Fairchild | 功能相似 | TO-92-3 |
P沟道通用放大器 P-Channel General Purpose Amplifier
|
||
2N5461
|
VISHAY | 功能相似 | TO-92 |
P沟道通用放大器 P-Channel General Purpose Amplifier
|
||
2N5461RLRAG
|
ON Semiconductor | 功能相似 | TO-226-3 |
JFET放大器P沟道 - 耗尽 JFET Amplifier P−Channel − Depletion
|
||
2N5461_D26Z
|
Fairchild | 完全替代 | TO-92-3 |
P沟道通用放大器 P-Channel General Purpose Amplifier
|
||
2N5461_D26Z
|
ON Semiconductor | 完全替代 | TO-226-3 |
P沟道通用放大器 P-Channel General Purpose Amplifier
|
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