Technical parameters/drain source resistance: 100 Ω
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/breakdown voltage: 30 V
Technical parameters/Input capacitance (Ciss): 25pF @15V(Vds)
Technical parameters/rated power (Max): 500 mW
Technical parameters/operating temperature (Max): 200 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 500 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-206
External dimensions/packaging: TO-206
Physical parameters/operating temperature: -65℃ ~ 200℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N5115
|
Microsemi | 功能相似 | TO-206 |
N沟道JFET N-CHANNEL JFET
|
||
2N5115
|
Calogic | 功能相似 | TO-18 |
N沟道JFET N-CHANNEL JFET
|
||
2N5115
|
Linear Technology | 功能相似 |
N沟道JFET N-CHANNEL JFET
|
|||
2N5115
|
VISHAY | 功能相似 | TO-206 |
N沟道JFET N-CHANNEL JFET
|
||
2N5115
|
Vishay Siliconix | 功能相似 | TO-206 |
N沟道JFET N-CHANNEL JFET
|
||
JANTX2N5114
|
Solitron Devices | 类似代替 | TO-18 |
JAN QPL LOW POWER FIELD EFFECT TRANSISTORS
|
||
JANTX2N5116
|
Microsemi | 功能相似 | TO-206 |
P沟道J- FET P-CHANNEL J-FET
|
||
JANTXV2N5116
|
Solitron Devices | 类似代替 |
Trans JFET P-CH
|
|||
JANTXV2N5116
|
Microsemi | 类似代替 | TO-18 |
Trans JFET P-CH
|
||
|
|
NXP | 功能相似 | SOT-23 |
P-channel silicon field-effect transistors
|
||
|
|
Philips | 功能相似 |
P-channel silicon field-effect transistors
|
|||
|
|
Philips | 功能相似 |
P-channel silicon field-effect transistors
|
|||
PMBFJ177
|
NXP | 功能相似 | SOT-23-3 |
P-channel silicon field-effect transistors
|
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