Technical parameters/dissipated power: 1 W
Technical parameters/minimum current amplification factor (hFE): 30
Technical parameters/Maximum current amplification factor (hFE): 120
Technical parameters/operating temperature (Max): 200 ℃
Technical parameters/operating temperature (Min): -55 ℃
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-46-3
External dimensions/packaging: TO-46-3
Other/Product Lifecycle: Active
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
JANTX2N3763
|
Microsemi | 功能相似 | TO-39 |
Power Bipolar Transistor, 1.5A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-39, Metal, 3 Pin,
|
||
JANTX2N3763
|
Raytheon | 功能相似 |
Power Bipolar Transistor, 1.5A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-39, Metal, 3 Pin,
|
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