Technical parameters/rated current: 50.0 mA
Technical parameters/breakdown voltage: -40.0 V|40 V
Technical parameters/drain source resistance: 30 Ω
Technical parameters/polarity: N-Channel
Technical parameters/breakdown voltage of gate source: -40.0 V
Technical parameters/Continuous drain current (Ids): 50.0 mA
Technical parameters/Input capacitance (Ciss): 14pF @20V(Vds)
Technical parameters/rated power (Max): 1.8 W
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-206
External dimensions/packaging: TO-206
Physical parameters/operating temperature: -65℃ ~ 200℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Vishay Siliconix | 类似代替 | TO-206 |
2N4391 系列 N 沟道 40 V 150 mA 通孔 JFET 晶体管 - TO-18
|
||
2N4391
|
Calogic | 类似代替 | TO-206 |
2N4391 系列 N 沟道 40 V 150 mA 通孔 JFET 晶体管 - TO-18
|
||
2N4391
|
Central Semiconductor | 类似代替 | TO-18 |
2N4391 系列 N 沟道 40 V 150 mA 通孔 JFET 晶体管 - TO-18
|
||
2N4391
|
Intersil | 类似代替 |
2N4391 系列 N 沟道 40 V 150 mA 通孔 JFET 晶体管 - TO-18
|
|||
2N4391-E3
|
Vishay Semiconductor | 类似代替 | TO-206 |
MOSFET N-CH 40V 0.1nA TO-18
|
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