Technical parameters/rated voltage (DC): -40.0 V
Technical parameters/rated current: -200 mA
Technical parameters/polarity: PNP
Technical parameters/dissipated power: 0.625 W
Technical parameters/breakdown voltage (collector emitter): 40 V
Technical parameters/maximum allowable collector current: 0.2A
Technical parameters/minimum current amplification factor (hFE): 50 @10mA, 1V
Technical parameters/Maximum current amplification factor (hFE): 150
Technical parameters/rated power (Max): 625 mW
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-92-3
External dimensions/height: 5.33 mm
External dimensions/packaging: TO-92-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N3905BU
|
Fairchild | 类似代替 | TO-226-3 |
Trans GP BJT PNP 40V 0.2A 3Pin TO-92 Bulk
|
||
2N3905BU
|
ON Semiconductor | 类似代替 | TO-226-3 |
Trans GP BJT PNP 40V 0.2A 3Pin TO-92 Bulk
|
||
2N3905TFR
|
Fairchild | 类似代替 | TO-92-3 |
双极晶体管 - 双极结型晶体管(BJT) PNP Transistor General Purpose
|
||
2N3905_D29Z
|
ON Semiconductor | 完全替代 | TO-92 |
Trans GP BJT PNP 40V 0.2A 3Pin TO-92 T/R
|
||
2N3905_D29Z
|
Fairchild | 完全替代 | TO-226-3 |
Trans GP BJT PNP 40V 0.2A 3Pin TO-92 T/R
|
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