Technical parameters/number of pins: 3
Technical parameters/polarity: NPN
Technical parameters/dissipated power: 1 W
Technical parameters/breakdown voltage (collector emitter): 150 V
Technical parameters/DC current gain (hFE): 100
Technical parameters/operating temperature (Max): 200 ℃
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-39
External dimensions/packaging: TO-39
Compliant with standards/RoHS standards: RoHS Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
JAN2N3501
|
Microsemi | 完全替代 | TO-205 |
NPN硅晶体管 NPN SILICON TRANSISTOR
|
||
JAN2N3501
|
Semicoa Semiconductor | 完全替代 | TO-39 |
NPN硅晶体管 NPN SILICON TRANSISTOR
|
||
JANS2N3501
|
Microsemi | 类似代替 | TO-39 |
NPN硅晶体管 NPN SILICON TRANSISTOR
|
||
|
|
ON Semiconductor | 类似代替 | TO-39 |
NPN硅晶体管 NPN SILICON TRANSISTOR
|
||
JANTX2N3501
|
Semicoa Semiconductor | 类似代替 | TO-39 |
NPN硅晶体管 NPN SILICON TRANSISTOR
|
||
JANTX2N3501
|
MSC | 类似代替 | TO-39-3 |
NPN硅晶体管 NPN SILICON TRANSISTOR
|
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