Technical parameters/rated voltage (DC): 60.0 V
Technical parameters/rated current: 15.0 A
Technical parameters/polarity: NPN
Technical parameters/breakdown voltage (collector emitter): 60 V
Technical parameters/maximum allowable collector current: 15A
Technical parameters/minimum current amplification factor (hFE): 20 @4A, 4V
Technical parameters/rated power (Max): 115 W
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-204
External dimensions/packaging: TO-204
Physical parameters/operating temperature: -65℃ ~ 200℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tray
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N3055G
|
ON Semiconductor | 功能相似 | TO-204-2 |
ON SEMICONDUCTOR 2N3055G 双极晶体管
|
||
2N3055H
|
Multicomp | 功能相似 | TO-3 |
Power Bipolar Transistor, 15A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin
|
||
2N3055H
|
Toshiba | 功能相似 |
Power Bipolar Transistor, 15A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin
|
|||
2N3055H
|
New Jersey Semiconductor | 功能相似 |
Power Bipolar Transistor, 15A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin
|
|||
2N3055H
|
Inchange Semiconductor | 功能相似 |
Power Bipolar Transistor, 15A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin
|
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