Technical parameters/dissipated power: 0.5 W
Technical parameters/breakdown voltage (collector emitter): 60 V
Technical parameters/minimum current amplification factor (hFE): 100 @150mA, 10V
Technical parameters/rated power (Max): 500 mW
Technical parameters/operating temperature (Max): 200 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 500 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 4
Encapsulation parameters/Encapsulation: TO-18
External dimensions/packaging: TO-18
Physical parameters/materials: Silicon
Physical parameters/operating temperature: -65℃ ~ 200℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tray
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards:
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N2907AUA
|
Microsemi | 功能相似 | TO-18 |
Trans GP BJT PNP 60V 0.6A 4Pin CSMD
|
||
JANS2N2907AUA
|
Semicoa Semiconductor | 完全替代 |
PNP小信号硅晶体管 PNP SMALL SIGNAL SILICON TRANSISTOR
|
|||
JANTX2N2907AUA
|
Semicoa Semiconductor | 完全替代 |
PNP小信号硅晶体管 PNP SMALL SIGNAL SILICON TRANSISTOR
|
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