Technical parameters/dissipated power: 0.3 W
Technical parameters/breakdown voltage (collector emitter): 50 V
Technical parameters/minimum current amplification factor (hFE): 75 @1mA, 10V
Technical parameters/rated power (Max): 300 mW
Technical parameters/operating temperature (Max): 200 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 300 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: CLCC-4
External dimensions/packaging: CLCC-4
Physical parameters/materials: Silicon
Physical parameters/operating temperature: -65℃ ~ 200℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards:
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N2222AUATX
|
TT Electronics/Optek Technology | 功能相似 | CLCC-4 |
Trans GP BJT NPN 50V 0.8A 4Pin CSMD
|
||
2N2222AUATX
|
TT Electronics | 功能相似 | CSMD |
Trans GP BJT NPN 50V 0.8A 4Pin CSMD
|
||
2N2222AUATXV
|
TT Electronics/Optek Technology | 功能相似 | CLCC-4 |
Trans GP BJT NPN 50V 0.8A 4Pin CSMD
|
||
2N2222AUBTX
|
TT Electronics/Optek Technology | 完全替代 | CLCC-4 |
Trans GP BJT NPN 50V 0.8A 3Pin CSMD
|
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