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Technical parameters/polarity: NPN
Technical parameters/breakdown voltage (collector emitter): 30 V
Technical parameters/maximum allowable collector current: 0.8A
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-18
External dimensions/packaging: TO-18
Other/Product Lifecycle: Active
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
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Infineon | 功能相似 | TO-18 |
NPN硅平面型晶体管 NPN Silicon Planar Transistors
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ON Semiconductor | 功能相似 |
NPN硅平面型晶体管 NPN Silicon Planar Transistors
|
|||
2N2221
|
Central Semiconductor | 功能相似 | TO-18 |
NPN硅平面型晶体管 NPN Silicon Planar Transistors
|
||
2N2222
|
Central Semiconductor | 功能相似 | TO-18 |
MULTICOMP 2N2222 单晶体管 双极, NPN, 30 V, 500 mW, 800 mA, 100 hFE
|
||
|
2N2222
|
Micross | 功能相似 |
MULTICOMP 2N2222 单晶体管 双极, NPN, 30 V, 500 mW, 800 mA, 100 hFE
|
|||
2N2222
|
CDIL | 功能相似 |
MULTICOMP 2N2222 单晶体管 双极, NPN, 30 V, 500 mW, 800 mA, 100 hFE
|
|||
2N2222
|
ON Semiconductor | 功能相似 | TO-18 |
MULTICOMP 2N2222 单晶体管 双极, NPN, 30 V, 500 mW, 800 mA, 100 hFE
|
||
2N2222
|
SEME-LAB | 功能相似 |
MULTICOMP 2N2222 单晶体管 双极, NPN, 30 V, 500 mW, 800 mA, 100 hFE
|
|||
|
2N2222
|
U | 功能相似 |
MULTICOMP 2N2222 单晶体管 双极, NPN, 30 V, 500 mW, 800 mA, 100 hFE
|
|||
2N2222
|
Fairchild | 功能相似 | TO-92-3 |
MULTICOMP 2N2222 单晶体管 双极, NPN, 30 V, 500 mW, 800 mA, 100 hFE
|
||
|
2N2222
|
Micro Commercial Components | 功能相似 | BCY |
MULTICOMP 2N2222 单晶体管 双极, NPN, 30 V, 500 mW, 800 mA, 100 hFE
|
||
2N2222
|
Philips | 功能相似 |
MULTICOMP 2N2222 单晶体管 双极, NPN, 30 V, 500 mW, 800 mA, 100 hFE
|
|||
|
2N2222
|
Continental Device | 功能相似 |
MULTICOMP 2N2222 单晶体管 双极, NPN, 30 V, 500 mW, 800 mA, 100 hFE
|
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