Technical parameters/number of pins: 2
Technical parameters/forward voltage: 0.95V @9.4A
Technical parameters/Maximum reverse voltage (Vrrm): 40 V
Technical parameters/forward current: 3 A
Technical parameters/Maximum forward surge current (Ifsm): 80 A
Technical parameters/maximum reverse leakage current (Ir): 2000 uA
Technical parameters/forward voltage (Max): 525 mV
Technical parameters/forward current (Max): 3 A
Technical parameters/operating temperature (Max): 125 ℃
Technical parameters/operating temperature (Min): -65 ℃
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 2
Encapsulation parameters/Encapsulation: DO-201AD
External dimensions/packaging: DO-201AD
Physical parameters/operating temperature: -65℃ ~ 125℃
Other/Packaging Methods: Cut Tape (CT)
Other/Minimum Packaging: 1000
Compliant with standards/RoHS standards:
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
1N5822-E3/54
|
Vishay Semiconductor | 类似代替 | DO-201AD |
VISHAY 1N5822-E3/54 肖特基整流器, 单, 40 V, 3 A, DO-201AD, 2 引脚, 525 mV
|
||
1N5822-E3/54
|
General Semiconductor | 类似代替 | DO-201AD |
VISHAY 1N5822-E3/54 肖特基整流器, 单, 40 V, 3 A, DO-201AD, 2 引脚, 525 mV
|
||
1N5822-E3/54
|
General Instruments Consortium | 类似代替 |
VISHAY 1N5822-E3/54 肖特基整流器, 单, 40 V, 3 A, DO-201AD, 2 引脚, 525 mV
|
|||
1N5822G
|
ON Semiconductor | 类似代替 | DO-201AD |
ON SEMICONDUCTOR 1N5822G 肖特基整流器, 通用, 单, 40 V, 3 A, DO-201AD, 2 引脚, 525 mV
|
||
1N5822G
|
Microsemi | 类似代替 | B |
ON SEMICONDUCTOR 1N5822G 肖特基整流器, 通用, 单, 40 V, 3 A, DO-201AD, 2 引脚, 525 mV
|
||
1N5822RLG
|
ON Semiconductor | 类似代替 | DO-201AD |
ON SEMICONDUCTOR 1N5822RLG 肖特基整流二极管, 3A 40V DO-201AD
|
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