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Model FDD5670
Description PowerTrench® N Channel MOSFET, 20A to 59.9A, Fairchild Semiconductor # # MOSFET transistor, Fairchild Semiconductor offers a wide range of MOSFET device combinations, including high voltage (>250V) and low voltage (Fairchild MOSFET provides excellent design reliability by reducing voltage peaks and overshoot to reduce junction capacitance and reverse recovery charge, without the need for additional external components to maintain system startup and operation for longer periods of time.
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Brand: Fairchild
Packaging TO-252-3
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
7.26  yuan 7.26yuan
10+:
$ 8.7132
100+:
$ 8.2775
500+:
$ 7.9871
1000+:
$ 7.9726
2000+:
$ 7.9145
5000+:
$ 7.8419
7500+:
$ 7.7838
10000+:
$ 7.7547
Quantity
10+
100+
500+
1000+
2000+
Price
$8.7132
$8.2775
$7.9871
$7.9726
$7.9145
Price $ 8.7132 $ 8.2775 $ 7.9871 $ 7.9726 $ 7.9145
Start batch production 10+ 100+ 500+ 1000+ 2000+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(6220) Minimum order quantity(10)
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Technical parameters/rated voltage (DC): 60.0 V

Technical parameters/rated current: 52.0 A

Technical parameters/number of channels: 1

Technical parameters/drain source resistance: 0.012 Ω

Technical parameters/polarity: N-Channel

Technical parameters/dissipated power: 83 W

Technical parameters/threshold voltage: 2.5 V

Technical parameters/input capacitance: 2.74 nF

Technical parameters/gate charge: 52.0 nC

Technical parameters/drain source voltage (Vds): 60 V

Technical parameters/leakage source breakdown voltage: 60.0 V

Technical parameters/breakdown voltage of gate source: ±20.0 V

Technical parameters/Continuous drain current (Ids): 52.0 A

Technical parameters/rise time: 12 ns

Technical parameters/Input capacitance (Ciss): 2739pF @15V(Vds)

Technical parameters/rated power (Max): 1.6 W

Technical parameters/descent time: 24 ns

Technical parameters/operating temperature (Max): 175 ℃

Technical parameters/operating temperature (Min): -55 ℃

Technical parameters/dissipated power (Max): 83 W

Encapsulation parameters/installation method: Surface Mount

Package parameters/number of pins: 3

Encapsulation parameters/Encapsulation: TO-252-3

External dimensions/length: 6.73 mm

External dimensions/width: 6.22 mm

External dimensions/height: 2.39 mm

External dimensions/packaging: TO-252-3

Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)

Other/Product Lifecycle: Active

Other/Packaging Methods: Tape & Reel (TR)

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

Compliant with standards/REACH SVHC standards: No SVHC

Compliant with standard/REACH SVHC version: 2015/06/15

Customs information/ECCN code: EAR99

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
FQB50N06LTM FQB50N06LTM ON Semiconductor 类似代替 TO-263-3
FAIRCHILD SEMICONDUCTOR FQB50N06LTM 晶体管, MOSFET, N沟道, 52.4 A, 60 V, 0.017 ohm, 10 V, 2.5 V
PDF
FQB50N06LTM FQB50N06LTM Fairchild 类似代替 TO-263-3
FAIRCHILD SEMICONDUCTOR FQB50N06LTM 晶体管, MOSFET, N沟道, 52.4 A, 60 V, 0.017 ohm, 10 V, 2.5 V
PDF

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