Technical parameters/rated voltage (DC): 60.0 V
Technical parameters/rated current: 500 mA
Technical parameters/drain source resistance: 5.00 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 350mW (Ta)
Technical parameters/drain source voltage (Vds): 60 V
Technical parameters/leakage source breakdown voltage: 60.0 V
Technical parameters/breakdown voltage of gate source: ±20.0 V
Technical parameters/Continuous drain current (Ids): 500 mA
Technical parameters/Input capacitance (Ciss): 60pF @10V(Vds)
Technical parameters/dissipated power (Max): 350mW (Ta)
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-92-3
External dimensions/packaging: TO-92-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Cut Tape (CT)
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
Customs information/ECCN code: EAR99
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