Technical parameters/frequency: 400 MHz
Technical parameters/rated voltage (DC): -12.0 V
Technical parameters/rated current: -1.50 A
Technical parameters/rated power: 0.5 W
Technical parameters/polarity: PNP
Technical parameters/dissipated power: 0.5 W
Technical parameters/breakdown voltage (collector emitter): 12 V
Technical parameters/maximum allowable collector current: 1.5A
Technical parameters/minimum current amplification factor (hFE): 270
Technical parameters/Maximum current amplification factor (hFE): 680
Technical parameters/rated power (Max): 500 mW
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 500 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-23-3
External dimensions/length: 3 mm
External dimensions/width: 1.8 mm
External dimensions/height: 0.95 mm
External dimensions/packaging: SOT-23-3
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2SB1689T106
|
ROHM Semiconductor | 类似代替 | SOT-323-3 |
PNP 功率晶体管,Rohm ### 双极晶体管,ROHM
|
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