Technical parameters/frequency: 120 MHz
Technical parameters/polarity: PNP
Technical parameters/dissipated power: 1 W
Technical parameters/breakdown voltage (collector emitter): 100 V
Technical parameters/maximum allowable collector current: 2A
Technical parameters/minimum current amplification factor (hFE): 100 @100mA, 5V
Technical parameters/Maximum current amplification factor (hFE): 400
Technical parameters/rated power (Max): 1 W
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 1 W
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-251-3
External dimensions/length: 6.9 mm
External dimensions/width: 2.5 mm
External dimensions/height: 4.5 mm
External dimensions/packaging: TO-251-3
Physical parameters/materials: Silicon
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2SA1709S-AN
|
ON Semiconductor | 功能相似 | TO-251-3 |
Small Signal Bipolar Transistor
|
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