Technical parameters/dissipated power: 138 W
Technical parameters/drain source voltage (Vds): 55 V
Technical parameters/rise time: 70 ns
Technical parameters/Input capacitance (Ciss): 2245pF @25V(Vds)
Technical parameters/rated power (Max): 138 W
Technical parameters/descent time: 41 ns
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 138W (Tc)
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/length: 10.3 mm
External dimensions/width: 4.5 mm
External dimensions/height: 9.4 mm
External dimensions/packaging: TO-220-3
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Rail
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BUK7516-55A
|
NXP | 功能相似 | SOT-78 |
TrenchMOS(tm) standard level FET
|
||
BUK7516-55A
|
Philips | 功能相似 |
TrenchMOS(tm) standard level FET
|
|||
BUK7516-55A,127
|
NXP | 类似代替 | TO-220-3 |
MOSFET N-CH 55V 65.7A TO220AB
|
||
|
|
Nexperia | 类似代替 | TO-220-3 |
MOSFET N-CH 55V 65.7A TO220AB
|
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