Technical parameters/forward voltage: 1.7V @16A
Technical parameters/dissipated power: 136000 mW
Technical parameters/reverse recovery time: 0 ns
Technical parameters/forward current: 16 A
Technical parameters/forward current (Max): 16 A
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/working junction temperature (Max): 175 ℃
Technical parameters/dissipated power (Max): 136000 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 2
Encapsulation parameters/Encapsulation: TO-220-2
External dimensions/packaging: TO-220-2
Other/Product Lifecycle: Discontinued at Digi-Key
Other/Packaging Methods: Each
Compliant with standards/RoHS standards:
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/12/17
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IDH16G65C5
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Infineon | 类似代替 | TO-220-2 |
thinQ!™ 碳化硅 (SiC) 肖特基二极管，Infineon Infineon thinQ!™ 第 5 代提供全新薄芯片技术，用于碳化硅肖特基势垒二极管，可提高耐热性。 Infineon thinQ!™ 肖特基二极管具有 600V、650V 和 1200V 电压选择。 Infineon 1200V 碳化硅二极管高效，且在 1200 V 操作时无损耗。 碳化硅肖特基二极管碳化硅设备提供各种用于高电压功率半导体的功能，如更高的击穿电场强度和导热性，可提供更高效率水平。 此代产品适用于电信 SMPS 和高端服务器、UPS 系统、电动机驱动器、太阳能反相器及 PC Silverbox 和照明应用。 降低的 EMI ### 二极管和整流器，Infineon
|
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IDH16G65C5XKSA1
|
Infineon | 类似代替 | TO-220-2 |
肖特基二极管与整流器 SIC DIODES
|
||
IDH16S60C
|
Infineon | 类似代替 | TO-220-2 |
INFINEON IDH16S60C 二极管, 碳化硅肖特基, SIC, thinQ 2G 600V系列, 单, 600 V, 16 A, 38 nC, TO-220
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