Technical parameters/number of pins: 3
Technical parameters/drain source resistance: 0.0258 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 57 W
Technical parameters/threshold voltage: 1.7 V
Technical parameters/input capacitance: 1520 pF
Technical parameters/drain source voltage (Vds): 100 V
Technical parameters/Continuous drain current (Ids): 30A
Technical parameters/rise time: 4 ns
Technical parameters/Input capacitance (Ciss): 1520pF @25V(Vds)
Technical parameters/descent time: 3 ns
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 57W (Tc)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-252-3
External dimensions/length: 6.5 mm
External dimensions/width: 6.22 mm
External dimensions/height: 2.3 mm
External dimensions/packaging: TO-252-3
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Other/Manufacturing Applications: Lighting, 48V inverter, Power Management, Automotive, Power Management, 48V DC/DC, Automotive, HID lighting
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/12/17
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Intersil | 功能相似 |
33A, 100V, 0.04ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
|
|||
STD40NF10
|
ST Microelectronics | 功能相似 | TO-252-3 |
STMICROELECTRONICS STD40NF10 晶体管, MOSFET, N沟道, 50 A, 100 V, 0.025 ohm, 10 V, 3 V
|
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