Technical parameters/power supply voltage (DC): 10.0V (min)
Technical parameters/working voltage: 10V ~ 16.8V
Technical parameters/rise/fall time: 80ns, 45ns
Technical parameters/number of output interfaces: 2
Technical parameters/number of pins: 8
Technical parameters/dissipated power: 1000 mW
Technical parameters/rise time: 150ns (Max)
Technical parameters/descent time: 100ns (Max)
Technical parameters/descent time (Max): 100 ns
Technical parameters/rise time (Max): 150 ns
Technical parameters/operating temperature (Max): 125 ℃
Technical parameters/operating temperature (Min): -40 ℃
Technical parameters/dissipated power (Max): 1000 mW
Technical parameters/power supply voltage: 10V ~ 15.6V
Technical parameters/power supply voltage (Max): 16.8 V
Technical parameters/power supply voltage (Min): 10 V
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: DIP-8
External dimensions/length: 10.92 mm
External dimensions/width: 7.11 mm
External dimensions/packaging: DIP-8
Physical parameters/operating temperature: -40℃ ~ 125℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Other/Manufacturing Applications: Power Management, Power management, lighting, lighting
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standard/REACH SVHC version: 2015/12/17
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IR21531D
|
International Rectifier | 功能相似 | DIP-8 |
Self-Oscillating 600V Half Bridge Driver IC with typical 0.18A source and 0.26A sink currents in 8 Lead PDIP package for IGBTs and MOSFETs.
|
||
IR2153DPBF
|
Infineon | 类似代替 | DIP-8 |
INFINEON IR2153DPBF 双功率芯片, 半桥, 10V-20V电源, 660ns延迟, DIP-8
|
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