Technical parameters/frequency: 50MHz ~ 350MHz
Technical parameters/power supply current: 100 mA
Technical parameters/number of channels: 1
Technical parameters/dissipated power: 463 mW
Technical parameters/gain: 15 dB
Technical parameters/available channels: S
Technical parameters/testing frequency: 350 MHz
Technical parameters/operating temperature (Max): 85 ℃
Technical parameters/operating temperature (Min): 40 ℃
Technical parameters/dissipated power (Max): 463 mW
Technical parameters/power supply voltage: 5 V
Technical parameters/power supply voltage (Max): 5 V
Technical parameters/power supply voltage (Min): 2.7 V
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 6
Encapsulation parameters/Encapsulation: SOT-23-6
External dimensions/packaging: SOT-23-6
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
THS9000DRDT
|
TI | 功能相似 | VDFN-6 |
50 MHz至400 MHz的可级联放大器 50 MHz to 400 MHz CASCADEABLE AMPLIFIER
|
||
THS9001DBVR
|
TI | 完全替代 | SOT-23-6 |
50 MHz至350 MHz的可级联放大器 50 MHz to 350 MHz CASCADEABLE AMPLIFIER
|
||
THS9001DBVT
|
TI | 类似代替 | SOT-23-6 |
Texas Instruments ### 射频 (RF) 放大器,Texas Instruments
|
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