Technical parameters/rated voltage (DC): 90.0 V
Technical parameters/rated current: 10.0 mA
Technical parameters/drain source resistance: 250 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 625mW (Ta)
Technical parameters/input capacitance: 6.50 pF
Technical parameters/drain source voltage (Vds): 90 V
Technical parameters/leakage source breakdown voltage: 90.0 V
Technical parameters/breakdown voltage of gate source: ±20.0 V
Technical parameters/Continuous drain current (Ids): 10.0 mA
Technical parameters/rise time: 500 ps
Technical parameters/Input capacitance (Ciss): 6.5pF @25V(Vds)
Technical parameters/dissipated power (Max): 625mW (Ta)
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: E-Line-3
External dimensions/packaging: E-Line-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tape, Tape & Box (TB)
Compliant with standards/RoHS standards:
Compliant with standards/lead standards: lead-free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual |
|---|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review