Technical parameters/drain source resistance: 5.5 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 1.3 W
Technical parameters/threshold voltage: 2.1 V
Technical parameters/drain source voltage (Vds): 60 V
Technical parameters/leakage source breakdown voltage: 60.0 V
Technical parameters/breakdown voltage of gate source: ±20.0 V
Technical parameters/Continuous drain current (Ids): 830 mA
Technical parameters/operating temperature (Max): 150 ℃
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 14
Encapsulation parameters/Encapsulation: DIP
External dimensions/packaging: DIP
Physical parameters/operating temperature: -55℃ ~ 150℃
Compliant with standards/RoHS standards: Non-Compliant
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