Technical parameters/rated current: 100 mA
Technical parameters/breakdown voltage: -25.0 V
Technical parameters/drain source resistance: 5.00 Ω
Technical parameters/polarity: N-Channel
Technical parameters/breakdown voltage of gate source: -25.0 V
Technical parameters/Continuous drain current (Ids): 150 mA
Technical parameters/operating temperature (Max): 150 ℃
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-206
External dimensions/height: 3.81 mm
External dimensions/packaging: TO-206
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Philips | 功能相似 |
N-channel junction FETs
|
|||
PMBFJ108
|
NXP | 功能相似 | SOT-23-3 |
N-channel junction FETs
|
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