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Model ZXMN6A09DN8TC
Description MOSFET 2N-CH 60V 4.3A 8SOIC
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Brand: Vishay Semiconductor
Packaging SOIC-8
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Packaging method Tape, Tape & Reel (TR)
Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(1477) Minimum order quantity(1)
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Technical parameters/rated voltage (DC): 60.0 V

Technical parameters/rated current: 4.40 A

Technical parameters/drain source resistance: 45.0 mΩ

Technical parameters/polarity: N-Channel

Technical parameters/dissipated power: 1.25 W

Technical parameters/drain source voltage (Vds): 60 V

Technical parameters/leakage source breakdown voltage: 60.0 V

Technical parameters/breakdown voltage of gate source: ±20.0 V

Technical parameters/Continuous drain current (Ids): 5.10 A

Technical parameters/rise time: 5.00 ns

Technical parameters/Input capacitance (Ciss): 1407pF @40V(Vds)

Technical parameters/rated power (Max): 1.25 W

Encapsulation parameters/installation method: Surface Mount

Package parameters/number of pins: 8

Encapsulation parameters/Encapsulation: SOIC-8

External dimensions/packaging: SOIC-8

Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)

Other/Product Lifecycle: Active

Other/Packaging Methods: Tape, Tape & Reel (TR)

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

Compliant with standards/REACH SVHC standards: No SVHC

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
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