Technical parameters/rated voltage (DC): -30.0 V
Technical parameters/rated current: -3.80 A
Technical parameters/drain source resistance: 75.0 mΩ
Technical parameters/polarity: P-Channel
Technical parameters/dissipated power: 1.8 W
Technical parameters/input capacitance: 825 pF
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/breakdown voltage of gate source: ±20.0 V
Technical parameters/Continuous drain current (Ids): 3.80 A
Technical parameters/rise time: 6.2 ns
Technical parameters/Input capacitance (Ciss): 825pF @25V(Vds)
Technical parameters/rated power (Max): 1.1 W
Technical parameters/descent time: 29.2 ns
Technical parameters/dissipated power (Max): 1.1W (Ta)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: MSOP-8
External dimensions/packaging: MSOP-8
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Discontinued at Digi-Key
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
ZXM64P03XTC
|
Diodes | 类似代替 | MSOP-8 |
30V P-CHANNEL ENHANCEMENT MODE MOSFET
|
||
|
|
Zetex | 类似代替 |
30V P-CHANNEL ENHANCEMENT MODE MOSFET
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review