Technical parameters/rated voltage (DC): -60.0 V
Technical parameters/rated current: -160 mA
Technical parameters/drain source resistance: 14.0 Ω
Technical parameters/polarity: P-Channel
Technical parameters/dissipated power: 625mW (Ta)
Technical parameters/input capacitance: 50.0 pF
Technical parameters/drain source voltage (Vds): 60 V
Technical parameters/breakdown voltage of gate source: ±20.0 V
Technical parameters/Continuous drain current (Ids): 160 mA
Technical parameters/rise time: 8.00 ns
Technical parameters/Input capacitance (Ciss): 50pF @18V(Vds)
Technical parameters/dissipated power (Max): 625mW (Ta)
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: E-Line-3
External dimensions/packaging: E-Line-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape, Tape & Box (TB)
Compliant with standards/RoHS standards:
Compliant with standards/lead standards: lead-free
Compliant with standards/REACH SVHC standards: No SVHC
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual |
|---|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review