Technical parameters/Input capacitance (Ciss): 75pF @25V(Vds)
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 700 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-92-3
External dimensions/length: 4.77 mm
External dimensions/width: 2.41 mm
External dimensions/height: 4.01 mm
External dimensions/packaging: TO-92-3
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BS170P
|
Diodes Zetex | 类似代替 | TO-92-3 |
BS170 系列 60 V 5 Ohm N 沟道 增强模式 垂直 DMOS FET- TO-92
|
||
BS170P
|
Diodes | 类似代替 | TO-92-3 |
BS170 系列 60 V 5 Ohm N 沟道 增强模式 垂直 DMOS FET- TO-92
|
||
BSS123TA
|
Diodes Zetex | 类似代替 | SOT-23-3 |
DIODES INC. BSS123TA 晶体管, MOSFET, N沟道, 170 mA, 100 V, 6 ohm, 10 V, 2.2 V
|
||
ZVN2106A
|
Diodes Zetex | 类似代替 | TO-92-3 |
DIODES INC. ZVN2106A 晶体管, MOSFET, N沟道, 450 mA, 60 V, 2 ohm, 10 V, 2.4 V
|
||
ZVN2106A
|
Diodes | 类似代替 | TO-92-3 |
DIODES INC. ZVN2106A 晶体管, MOSFET, N沟道, 450 mA, 60 V, 2 ohm, 10 V, 2.4 V
|
||
|
|
Zetex | 类似代替 | TO-92-3 |
DIODES INC. ZVN2106A 晶体管, MOSFET, N沟道, 450 mA, 60 V, 2 ohm, 10 V, 2.4 V
|
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