Technical parameters/rated voltage (DC): 60.0 V
Technical parameters/rated current: 1.10 A
Technical parameters/drain source resistance: 450 mΩ
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 850mW (Ta)
Technical parameters/input capacitance: 350 pF
Technical parameters/drain source voltage (Vds): 60 V
Technical parameters/leakage source breakdown voltage: 60.0 V
Technical parameters/breakdown voltage of gate source: ±20.0 V
Technical parameters/Continuous drain current (Ids): 1.10 A
Technical parameters/rise time: 25.0 ns
Technical parameters/Input capacitance (Ciss): 350pF @25V(Vds)
Technical parameters/dissipated power (Max): 850mW (Ta)
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: E-Line-3
External dimensions/packaging: E-Line-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape, Tape & Box (TB)
Compliant with standards/RoHS standards:
Compliant with standards/lead standards: lead-free
Compliant with standards/REACH SVHC standards: No SVHC
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual |
|---|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review