Technical parameters/rated voltage (DC): 400 V
Technical parameters/rated current: 90.0 mA
Technical parameters/drain source resistance: 50.0 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 700mW (Ta)
Technical parameters/input capacitance: 70.0 pF
Technical parameters/drain source voltage (Vds): 400 V
Technical parameters/leakage source breakdown voltage: 400 V
Technical parameters/breakdown voltage of gate source: ±20.0 V
Technical parameters/Continuous drain current (Ids): 90.0 mA
Technical parameters/rise time: 7.00 ns
Technical parameters/Input capacitance (Ciss): 70pF @25V(Vds)
Technical parameters/rated power (Max): 700 mW
Technical parameters/dissipated power (Max): 700mW (Ta)
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-92-3
External dimensions/packaging: TO-92-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards:
Compliant with standards/lead standards: lead-free
Compliant with standards/REACH SVHC standards: No SVHC
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