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Model ZVNL110GTC
Description MOSFET N-CH 100V 600mA SOT223
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Brand: Vishay Semiconductor
Packaging TO-261-4
Delivery time
Packaging method Tape, Tape & Reel (TR)
Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(3057) Minimum order quantity(1)
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Technical parameters/rated voltage (DC): 100 V

Technical parameters/rated current: 600 mA

Technical parameters/drain source resistance: 4.50 Ω

Technical parameters/polarity: N-Channel

Technical parameters/dissipated power: 1.1W (Ta)

Technical parameters/input capacitance: 75.0 pF

Technical parameters/drain source voltage (Vds): 100 V

Technical parameters/leakage source breakdown voltage: 100 V

Technical parameters/breakdown voltage of gate source: ±20.0 V

Technical parameters/Continuous drain current (Ids): 600 mA

Technical parameters/rise time: 12.0 ns

Technical parameters/Input capacitance (Ciss): 75pF @25V(Vds)

Technical parameters/dissipated power (Max): 1.1W (Ta)

Encapsulation parameters/installation method: Surface Mount

Encapsulation parameters/Encapsulation: TO-261-4

External dimensions/packaging: TO-261-4

Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)

Other/Product Lifecycle: Active

Other/Packaging Methods: Tape, Tape & Reel (TR)

Compliant with standards/RoHS standards:

Compliant with standards/lead standards: lead-free

Compliant with standards/REACH SVHC standards: No SVHC

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