Technical parameters/rated voltage (DC): 300 V
Technical parameters/rated current: 5.00 A
Technical parameters/number of pins: 3
Technical parameters/polarity: NPN
Technical parameters/dissipated power: 1.2 W
Technical parameters/breakdown voltage (collector emitter): 300 V
Technical parameters/maximum allowable collector current: 3A
Technical parameters/minimum current amplification factor (hFE): 100 @500mA, 10V
Technical parameters/rated power (Max): 1.2 W
Technical parameters/DC current gain (hFE): 200
Technical parameters/operating temperature (Max): 200 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 1200 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-92-3
External dimensions/length: 4.77 mm
External dimensions/width: 2.41 mm
External dimensions/height: 4.01 mm
External dimensions/packaging: TO-92-3
Physical parameters/materials: Silicon
Physical parameters/operating temperature: -55℃ ~ 200℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Bulk
Other/Manufacturing Applications: industry
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/12/17
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
ZTX857STZ
|
Diodes | 类似代替 | E-Line-3 |
NPN SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR
|
||
ZTX857STZ
|
Diodes Zetex | 类似代替 | TO-92 |
NPN SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR
|
||
ZTX857STZ
|
Zetex | 类似代替 | TO-92 |
NPN SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review