Technical parameters/frequency: 100 MHz
Technical parameters/rated voltage (DC): -30.0 V
Technical parameters/rated current: -4.50 A
Technical parameters/polarity: PNP
Technical parameters/dissipated power: 1.2 W
Technical parameters/breakdown voltage (collector emitter): 30 V
Technical parameters/maximum allowable collector current: 4.5A
Technical parameters/minimum current amplification factor (hFE): 100 @1A, 1V
Technical parameters/rated power (Max): 1.58 W
Technical parameters/operating temperature (Max): 200 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 1200 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: E-Line-3
External dimensions/packaging: E-Line-3
Physical parameters/materials: Silicon
Physical parameters/operating temperature: -55℃ ~ 200℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Box
Compliant with standards/RoHS standards:
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FZT1151ATA
|
Diodes Zetex | 功能相似 | SOT-223 |
FZT1151ATA 编带
|
||
FZT1151ATA
|
Zetex | 功能相似 | SOT-223 |
FZT1151ATA 编带
|
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