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Model ZTX618STOA
Description Bipolar Transistor - Bipolar Junction Transistor (BJT) NPN High Gain
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Brand: Diodes
Packaging E-Line-3
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(8874) Minimum order quantity(1)
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Technical parameters/rated voltage (DC): 20.0 V

Technical parameters/rated current: 3.50 A

Technical parameters/polarity: NPN

Technical parameters/dissipated power: 1 W

Technical parameters/breakdown voltage (collector emitter): 20 V

Technical parameters/maximum allowable collector current: 3.5A

Technical parameters/minimum current amplification factor (hFE): 300 @200mA, 2V

Technical parameters/Maximum current amplification factor (hFE): 200 @10mA, 2V

Technical parameters/rated power (Max): 1 W

Technical parameters/operating temperature (Max): 150 ℃

Technical parameters/operating temperature (Min): -55 ℃

Technical parameters/dissipated power (Max): 1 W

Encapsulation parameters/installation method: Through Hole

Encapsulation parameters/Encapsulation: E-Line-3

External dimensions/length: 4.77 mm

External dimensions/width: 2.41 mm

External dimensions/height: 4.01 mm

External dimensions/packaging: E-Line-3

Physical parameters/operating temperature: -55℃ ~ 200℃ (TJ)

Other/Product Lifecycle: Active

Other/Packaging Methods: Tape & Reel (TR)

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

Compliant with standards/REACH SVHC standards: No SVHC

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