Technical parameters/rated voltage (DC): -400 V
Technical parameters/rated current: -500 mA
Technical parameters/polarity: PNP
Technical parameters/dissipated power: 1.2 W
Technical parameters/gain bandwidth product: 85 MHz
Technical parameters/breakdown voltage (collector emitter): 400 V
Technical parameters/maximum allowable collector current: 0.5A
Technical parameters/minimum current amplification factor (hFE): 100 @500mA, 10V
Technical parameters/rated power (Max): 1.2 W
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): 55 ℃
Technical parameters/dissipated power (Max): 1200 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: E-Line-3
External dimensions/length: 4.77 mm
External dimensions/width: 2.41 mm
External dimensions/height: 4.01 mm
External dimensions/packaging: E-Line-3
Physical parameters/materials: Silicon
Physical parameters/operating temperature: -55℃ ~ 200℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FZT958TA
|
Diodes Zetex | 功能相似 | SOT-223 |
三极管(BJT) FZT958TA SOT-223-3
|
||
FZT958TA
|
Diodes | 功能相似 | TO-261-4 |
三极管(BJT) FZT958TA SOT-223-3
|
||
FZT958TC
|
Diodes | 功能相似 |
Trans GP BJT PNP 400V 0.5A 4Pin(3+Tab) SOT-223 T/R
|
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