Technical parameters/rated voltage (DC): -20.0 V
Technical parameters/rated current: -4.50 A
Technical parameters/polarity: PNP
Technical parameters/dissipated power: 1.2 W
Technical parameters/breakdown voltage (collector emitter): 20 V
Technical parameters/maximum allowable collector current: 4.5A
Technical parameters/minimum current amplification factor (hFE): 100 @1A, 1V
Technical parameters/Maximum current amplification factor (hFE): 100 @10mA, 1V
Technical parameters/rated power (Max): 1.2 W
Technical parameters/operating temperature (Max): 200 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 1200 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-92-3
External dimensions/length: 4.77 mm
External dimensions/width: 2.41 mm
External dimensions/height: 4.01 mm
External dimensions/packaging: TO-92-3
Physical parameters/materials: Silicon
Physical parameters/operating temperature: -55℃ ~ 200℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FZT948TA
|
Diodes | 功能相似 | TO-261-4 |
FZT948TA 编带
|
||
FZT948TA
|
Philips | 功能相似 | SOT-223-4 |
FZT948TA 编带
|
||
|
|
Diodes | 完全替代 | TO-92 |
Transistors (BJT) - Single
|
||
ZTX948STZ
|
Diodes | 类似代替 | E-Line-3 |
PNP SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR
|
||
ZTX948STZ
|
Zetex | 类似代替 | TO-92 |
PNP SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR
|
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