Technical parameters/rated voltage (DC): 120 V
Technical parameters/rated current: 1.00 A
Technical parameters/number of pins: 3
Technical parameters/polarity: NPN
Technical parameters/dissipated power: 1 W
Technical parameters/breakdown voltage (collector emitter): 120 V
Technical parameters/maximum allowable collector current: 1A
Technical parameters/minimum current amplification factor (hFE): 2000 @1A, 5V
Technical parameters/Maximum current amplification factor (hFE): 2000
Technical parameters/rated power (Max): 1 W
Technical parameters/DC current gain (hFE): 5000
Technical parameters/operating temperature (Max): 200 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/gain bandwidth: 150MHz (Min)
Technical parameters/dissipated power (Max): 1 W
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: E-Line-3
External dimensions/length: 4.77 mm
External dimensions/width: 2.41 mm
External dimensions/height: 4.01 mm
External dimensions/packaging: E-Line-3
Physical parameters/operating temperature: -55℃ ~ 200℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Bulk
Other/Manufacturing Applications: Automotive, Automotive
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2014/12/17
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BC879
|
Siemens AG | 功能相似 |
NPN Darlington transistors
|
|||
|
BC879
|
NXP | 功能相似 | TO-92 |
NPN Darlington transistors
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review