Encapsulation parameters/Encapsulation: SM-8
External dimensions/packaging: SM-8
Other/collector base reverse breakdown voltage V (BR) CBO Collector Base Voltage (VCBO): 50V
Other/Collector emitter reverse breakdown voltage V (BR) CEO Collector Emiter Voltage (VCEO): 17.5V
Other/collector continuous output current IC Collector Current (IC): 5A
Other/Q1 Base Input Resistance R1 Input Resistance (R1): 150MHz
Other/Q1 Base emitter input resistance R2 Base emitter Resistance (R2): 450
Other/Q1 Resistance Ratio (R1/R2) Q1 Resistance Ratio: 120mV
Other/Q2 Base Input Resistance R1 Input Resistance (R1): 2750mW
Other/Q2 Base emitter input resistance R2 Base emitter Resistance (R2): Features • SM-8 DUAL NPN MEDIUM POWER HIGH GAIN TRANSISTORS
Other/Q2 Resistance Ratio (R1/R2) Q2 Resistance Ratio: Features: SM-8 Dual NPN Medium Power High Gain Transistor
Other/Specification PDF: __
Compliant with standards/RoHS standards: Non-Compliant
Customs Information/Hong Kong Import and Export License: NLR
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