Technical parameters/drain source voltage (Vds): 60 V
Encapsulation parameters/Encapsulation: TO-247
External dimensions/packaging: TO-247
Other/Product Catalog: MOS(Field Effect Transistor
Other/continuous drain current (Id) (at 25 ° C): 230A(Tc)
Other/leakage source voltage (Vdss): 60V
Other/gate source threshold voltage: 4V @ 250uA
Other/leakage source conduction resistance: 2.8 mΩ @ 115A,10V
Other/Type: N channel
Other/maximum power dissipation (Ta): 326W(Tc)
Other/Product Code: C358123
Other/Packaging Specifications: TO-247A-3L
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