Technical parameters/polarity: P-CH
Technical parameters/dissipated power: 485mW (Ta), 6.25W (Tc)
Technical parameters/drain source voltage (Vds): 20 V
Technical parameters/Continuous drain current (Ids): 2.7A
Technical parameters/Input capacitance (Ciss): 550pF @10V(Vds)
Technical parameters/dissipated power (Max): 485mW (Ta), 6.25W (Tc)
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: uDFN-6
External dimensions/packaging: uDFN-6
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
PMFPB6545UP,115
|
NXP | 功能相似 | SOT-6 |
Trans MOSFET P-CH 20V 3.5A 6Pin DFN EP T/R
|
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