Technical parameters/frequency: 1.96 GHz
Technical parameters/rated voltage (DC): 28.0 V
Technical parameters/rated current: 10 µA
Technical parameters/halogen-free state: Halogen Free
Technical parameters/polarity: N-Channel
Technical parameters/drain source voltage (Vds): 68 V
Technical parameters/output power: 4 W
Technical parameters/gain: 18 dB
Technical parameters/test current: 50 mA
Technical parameters/Input capacitance (Ciss): 23pF @28V(Vds)
Technical parameters/output power (Max): 4 W
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/rated voltage: 68 V
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: PLD-1
External dimensions/length: 6.73 mm
External dimensions/width: 5.97 mm
External dimensions/height: 1.83 mm
External dimensions/packaging: PLD-1
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Freescale | 功能相似 | NI-200S |
FET RF 65V 1.93GHz NI-200S
|
||
|
|
Motorola | 功能相似 | CASE 458C-03 |
Trans RF MOSFET N-CH 65V 3Pin NI-200Z T/R
|
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