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Model VS-GT105NA120UX
Description IGBT Module, Vishay's high-efficiency IGBT module comes with PT, NPT, and Trench IGBT technology options. This series includes single switch, inverter, chopper, half bridge or with custom configuration. These IGBT modules are designed to serve as primary switching devices in switch mode power supplies, uninterruptible power supplies, industrial welding, motor drive, and power factor correction systems. Typical applications include: boost and buck converters, forward and double forward converters, half bridge, full bridge (H-bridge), and three-phase bridge. A wide range of industrial standard packaging types are available for direct installation on heat sinks, including PT, NPT, and Trench IGBT technologies. The low VCE (on) IGBT switching frequency ranges from 1 kHz to 150 kHz, with robust instantaneous performance and high isolation voltage up to 3500 V, 100% lead-free (Pb), and RoHS compliant low thermal resistance. The IGBT module, Vishay insulated gate level bipolar transistor or IGBT, is a three terminal power semiconductor device known for its efficient and fast switching. IGBT combines the simple gate driving characteristics of MOSFETs with the high current and low saturation voltage capabilities of bipolar transistors by combining isolated gate FETs used for input control and bipolar power transistors used as switches in a single device.
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Brand: Vishay Semiconductor
Packaging SOT-227-4
Delivery time
Packaging method
Standard packaging quantity 1
308.19  yuan 308.19yuan
1+:
$ 354.4185
10+:
$ 345.1728
50+:
$ 338.0844
100+:
$ 335.6189
200+:
$ 333.7698
500+:
$ 331.3043
1000+:
$ 329.7633
2000+:
$ 328.2224
Quantity
1+
10+
50+
100+
200+
Price
$354.4185
$345.1728
$338.0844
$335.6189
$333.7698
Price $ 354.4185 $ 345.1728 $ 338.0844 $ 335.6189 $ 333.7698
Start batch production 1+ 10+ 50+ 100+ 200+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(5722) Minimum order quantity(1)
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Technical parameters/dissipated power: 463000 mW

Technical parameters/breakdown voltage (collector emitter): 1200 V

Technical parameters/rated power (Max): 463 W

Technical parameters/operating temperature (Max): 150 ℃

Technical parameters/operating temperature (Min): -40 ℃

Technical parameters/dissipated power (Max): 463 W

Encapsulation parameters/installation method: Chassis

Package parameters/number of pins: 4

Encapsulation parameters/Encapsulation: SOT-227-4

External dimensions/length: 38.3 mm

External dimensions/width: 25.7 mm

External dimensions/height: 12.3 mm

External dimensions/packaging: SOT-227-4

Physical parameters/operating temperature: -40℃ ~ 150℃ (TJ)

Other/Product Lifecycle: Active

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

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