Technical parameters/breakdown voltage (collector emitter): 600 V
Technical parameters/rated power (Max): 625 W
Encapsulation parameters/installation method: Chassis
Package parameters/number of pins: 4
Encapsulation parameters/Encapsulation: SOT-227-4
External dimensions/packaging: SOT-227-4
Physical parameters/operating temperature: -40℃ ~ 150℃
Other/Product Lifecycle: Last Time Buy
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
VS-GB100DA60UP
|
VISHAY | 类似代替 | SOT-227 |
VISHAY VS-GB100DA60UP IGBT Array & Module Transistor, NPN, 125A, 2.4V, 447W, 600V, SOT-227
|
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