Technical parameters/reverse recovery time: 55 ns
Technical parameters/Maximum forward surge current (Ifsm): 200 A
Technical parameters/forward voltage (Max): 1.2V @8A
Technical parameters/forward current (Max): 8 A
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -40 ℃
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-252
External dimensions/length: 6.73 mm
External dimensions/width: 6.22 mm
External dimensions/height: 2.39 mm
External dimensions/packaging: TO-252
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards:
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
VS-8EWF06STR-M3
|
Vishay Semiconductor | 完全替代 | TO-252-3 |
Diode 600V 8A 3Pin(2+Tab) DPAK T/R
|
||
|
|
VISHAY | 完全替代 | TO-252 |
Diode 600V 8A 3Pin(2+Tab) DPAK T/R
|
||
VS-8EWF06STRL-M3
|
Vishay Semiconductor | 完全替代 | TO-252-3 |
1.4A 至 20A,Vishay Semiconductor 采用工业标准封装类型的多用途、高效快速恢复功率二极管。 ### 二极管和整流器,Vishay Semiconductor
|
||
VS-8EWF06STRL-M3
|
VISHAY | 完全替代 | TO-252 |
1.4A 至 20A,Vishay Semiconductor 采用工业标准封装类型的多用途、高效快速恢复功率二极管。 ### 二极管和整流器,Vishay Semiconductor
|
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