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Model VND7N04-1
Description “ OMNIFET ”Fully self-protection power MOSFET "OMNIFET"
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Brand: ST Microelectronics
Packaging TO-251-3
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Packaging method Tube
Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(5936) Minimum order quantity(1)
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Technical parameters/number of output interfaces: 1

Technical parameters/drain source resistance: 140 mΩ

Technical parameters/dissipated power: 60000 mW

Technical parameters/leakage source breakdown voltage: 42.0 V

Technical parameters/Continuous drain current (Ids): 7.00 A

Technical parameters/input voltage (Max): 18 V

Technical parameters/output current (Max): 4 A

Technical parameters/number of inputs: 1

Technical parameters/dissipated power (Max): 60000 mW

Encapsulation parameters/installation method: Through Hole

Package parameters/number of pins: 3

Encapsulation parameters/Encapsulation: TO-251-3

External dimensions/packaging: TO-251-3

Physical parameters/operating temperature: -40℃ ~ 150℃ (TJ)

Other/Product Lifecycle: Not Recommended for New Designs

Other/Packaging Methods: Tube

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

Customs information/ECCN code: EAR99

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
VND7N04-1-E VND7N04-1-E ST Microelectronics 类似代替 TO-251-3
Power Switch Lo Side 1Out 4A 0.28Ω Automotive 3Pin(3+Tab) IPAK Tube
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