Technical parameters/rated voltage (DC): 42.0 V
Technical parameters/rated current: 14.0 A
Technical parameters/number of output interfaces: 1
Technical parameters/dissipated power: 50 W
Technical parameters/leakage source breakdown voltage: 42 V
Technical parameters/rise time: 160 ns
Technical parameters/output current (Max): 10 A
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/packaging: TO-220-3
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
NXP | 功能相似 | TO-220 |
功率MOS晶体管TOPFET PowerMOS transistor TOPFET
|
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