Technical parameters/rated voltage (DC): 70.0 V
Technical parameters/rated current: 35.0 A
Technical parameters/number of output interfaces: 1
Technical parameters/power supply current: 0.25 mA
Technical parameters/drain source resistance: 28.0 mΩ
Technical parameters/dissipated power: 125000 mW
Technical parameters/leakage source breakdown voltage: 70.0 V
Technical parameters/Continuous drain current (Ids): 35.0 A
Technical parameters/output current (Max): 25 A
Technical parameters/output current (Min): 25 A
Technical parameters/dissipated power (Max): 125000 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 12
Encapsulation parameters/Encapsulation: PowerSO-10
External dimensions/packaging: PowerSO-10
Other/Product Lifecycle: Not Recommended for New Designs
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
VNB35N0713TR
|
ST Microelectronics | 类似代替 | TO-263-3 |
MOSFET OMNIFET 70V 35A D2PAK
|
||
VNV35N07-E
|
ST Microelectronics | 类似代替 | PowerSO-10 |
VNV35N07 系列 18 V 28 mOhm 完全 自动保护 功率 MOSFET - PowerSO-10
|
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