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Model VNS3NV04D-E
Description OMNIFET IIFully Autoprotected Power MOSFET OMNIFET II
Product QR code
Brand: ST Microelectronics
Packaging SO-8
Delivery time
Packaging method Tube
Standard packaging quantity 1
6.72  yuan 6.72yuan
10+:
$ 8.0664
100+:
$ 7.6631
500+:
$ 7.3942
1000+:
$ 7.3808
2000+:
$ 7.3270
5000+:
$ 7.2598
7500+:
$ 7.2060
10000+:
$ 7.1791
Quantity
10+
100+
500+
1000+
2000+
Price
$8.0664
$7.6631
$7.3942
$7.3808
$7.3270
Price $ 8.0664 $ 7.6631 $ 7.3942 $ 7.3808 $ 7.3270
Start batch production 10+ 100+ 500+ 1000+ 2000+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(1948) Minimum order quantity(10)
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Technical parameters/number of output interfaces: 2

Technical parameters/output current: 3.5 A

Technical parameters/drain source resistance: 120 mΩ

Technical parameters/polarity: Dual N-Channel

Technical parameters/dissipated power: 4.00 W

Technical parameters/leakage source breakdown voltage: 45.0 V

Technical parameters/breakdown voltage of gate source: ±20.0 V

Technical parameters/Continuous drain current (Ids): 1.50 A

Technical parameters/output current (Max): 3.5 A

Encapsulation parameters/installation method: Surface Mount

Package parameters/number of pins: 8

Encapsulation parameters/Encapsulation: SO-8

External dimensions/length: 4.9 mm

External dimensions/width: 3.9 mm

External dimensions/packaging: SO-8

Physical parameters/operating temperature: -40℃ ~ 150℃ (TJ)

Other/Product Lifecycle: Not Recommended for New Designs

Other/Packaging Methods: Tube

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

Compliant with standards/REACH SVHC standards: No SVHC

Customs information/ECCN code: EAR99

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
VNS3NV04DTR-E VNS3NV04DTR-E ST Microelectronics 功能相似 SOIC-8
OMNIFET II完全autoprotected功率MOSFET OMNIFET II fully autoprotected Power MOSFET
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