Technical parameters/rated power: 230 W
Technical parameters/number of pins: 3
Technical parameters/drain source resistance: 0.0014 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 230 W
Technical parameters/threshold voltage: 3 V
Technical parameters/drain source voltage (Vds): 40 V
Technical parameters/Continuous drain current (Ids): 250A
Technical parameters/rise time: 70 ns
Technical parameters/Input capacitance (Ciss): 7330pF @25V(Vds)
Technical parameters/descent time: 53 ns
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 230W (Tc)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-263-3
External dimensions/length: 10.67 mm
External dimensions/width: 9.65 mm
External dimensions/height: 4.83 mm
External dimensions/packaging: TO-263-3
Physical parameters/materials: Silicon
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Other/Manufacturing Applications: Push-Pull, Battery Operated Drive, Full-Bridge, Consumer Full-Bridge
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standard/REACH SVHC version: 2015/12/17
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRFS7430TRLPBF
|
Infineon | 类似代替 | TO-263-3 |
INFINEON IRFS7430TRLPBF 晶体管, MOSFET, N沟道, 195 A, 40 V, 0.00097 ohm, 10 V, 3.9 V 新
|
||
IRFS7434TRLPBF
|
Infineon | 类似代替 | TO-263-3 |
晶体管, MOSFET, StrongIRFET™, N沟道, 195 A, 40 V, 0.00125 ohm, 10 V, 3 V
|
||
IRFS7437PBF
|
International Rectifier | 完全替代 | TO-263-3 |
INFINEON IRFS7437PBF 晶体管, MOSFET, N沟道, 195 A, 40 V, 0.0014 ohm, 10 V, 3 V
|
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