Technical parameters/forward voltage: 880mV @20A
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-262-3
External dimensions/packaging: TO-262-3
Physical parameters/operating temperature: -40℃ ~ 150℃
Other/Product Lifecycle: Active
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: lead-free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
VI40120C-E3/4W
|
Vishay Semiconductor | 完全替代 | TO-262-3 |
双高压Trench MOS势垒肖特基整流器 Dual High-Voltage Trench MOS Barrier Schottky Rectifier
|
||
VI40120CHM3/4W
|
Vishay Semiconductor | 完全替代 | TO-262-3 |
肖特基二极管与整流器 40A,100V,TRENCH SKY RECT.
|
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